PART |
Description |
Maker |
BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
BS616LV2010 |
Asynchronous 2M(128Kx16) bits Static RAM From old datasheet system
|
BSI
|
BS62LV2563 |
Asynchronous 256K(32Kx8) bits Static RAM From old datasheet system
|
BSI
|
UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
|
Aeroflex Circuit Technology
|
BS616LV1011 BS616LV1011EIP70 BS616LV1011AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16 Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS62LV2006TI BS62LV2006TIG55 BS62LV2006TIG70 BS62L |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8 Asynchronous 2M(256Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. ETC BSI[Brilliance Semiconductor]
|
BS616LV1615 BS616LV1615FIP70 BS616LV1615FC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16 Asynchronous 16M(1Mx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system Asynchronous 4M(512Kx8) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Brilliance Semiconducto...
|
BS616LV161 BS616LV1613FC BS616LV1613FC-55 BS616LV1 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit Asynchronous 16M(1Mx16) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
IS42S32200B-6T IS42S32200B-6TI IS42S32200B-6TL IS4 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|